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HTM11R8ET52-1 APD Photodiode
Model:
Classification:
Keyword: dynamo,Water pump series
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Product Introduction
■ Features
● Silicon APD photodiode
● Wavelength Range：400nm~1100nm
● Sensitive Area Diameter：Φ800μm
● High breakdown voltage：≥300V
● Low dark current
● High Sensitivity
● TO52 Hermetic package
■ Applications
● Optical power meter、laser meter, safety monitoring
● Near-infrared detection、laser ranger、Optical communication
■ Specifications
Table 1 Typical Parameters
| Parameters | symbol | Test conditions (Ta=23℃,λ=1064nm,M=100, Pin=1uW) |
Min | Typical | Max | Units |
| Sensitive Diameter | D | -- | -- | 0.88 | --- | mm |
| Wavelength Range | λ | --- | 400 | --- | 1100 | nm |
| Breakdown Voltage | VBR | IR=10uA | 300 | -- | -- | V |
| Sensitivity① | Re | --- | 30 | 36 | -- | A/W |
| Dark current | ID | dark background | -- | 5 | 12 | nA |
| Junction capacitor② | Ct | f=1MHz | -- | 2.5 | 4.0 | pF |
| Temp Drift of VBR | δ | -- | -- | 2.4 | 3.0 | V/℃ |
| Forward current | IF | -- | -- | -- | 1 | mA |
| Shift distance③ | -- | -- | 1.24 | --- | mm |
Notes:
① In order to obtain M=100, Operating voltage is recommended with VR=0.8~0.85*VBR;
② When the operating voltage VR>55V, the junction capacitance is basically <5pF;
③ Shift Distance =the distance between outer window surface and photosensitive surface, and the window material is DM305 with 0.5mm thickness。
■ Characteristics
Figure1 Sensitivity vs wavelength
Figure2 Multiplication VS VR
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Address: No. 601, SOHO Building, 28-2 Xiyong Avenue, Xiyong Subdistrict, High-tech Zone, Chongqing
